Справочник MOSFET. IXTA06N120P

 

IXTA06N120P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTA06N120P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13.3 nC
   trⓘ - Время нарастания: 900 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 34 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IXTA06N120P

 

 

IXTA06N120P Datasheet (PDF)

 9.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf

IXTA06N120P IXTA06N120P

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -

 9.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf

IXTA06N120P IXTA06N120P

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ

 9.3. Size:186K  ixys
 ixta08n100d2hv.pdf

IXTA06N120P IXTA06N120P

Advance Technical InformationHigh Voltage VDSX = 1000VIXTA08N100D2HVDepletion Mode ID(on) > 800mAMOSFET RDS(on) 21 N-ChannelTO-263HVGSSymbol Test Conditions Maximum Ratings D (Tab)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C, RGS = 1M 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = Drain

 9.4. Size:201K  ixys
 ixta02n450hv ixtt02n450hv.pdf

IXTA06N120P IXTA06N120P

Advance Technical InformationHigh Voltage VDSS = 4500VIXTA02N450HVPower MOSFETsID25 = 200mAIXTT02N450HV RDS(on) 750 N-Channel Enhancement ModeTO-263 (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VTO-268 (IXTT)VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VGVGSM Trans

 9.5. Size:184K  ixys
 ixta02n250hv.pdf

IXTA06N120P IXTA06N120P

Advance Technical InformationHigh VoltageIXTA02N250HVVDSS = 2500VPower MOSFETID25 = 200mA RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263ABGS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 2500 VS = Source Tab = DrainVGSS

 9.6. Size:185K  ixys
 ixta05n100hv.pdf

IXTA06N120P IXTA06N120P

VDSS = 1000VIXTA05N100HVHigh VoltageID25 = 750mAIXTA05N100Power MOSFET RDS(on) 17 IXTP05N100N-Channel Enhancement ModeTO-263HV (IXTA)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 30 V GS

 9.7. Size:177K  ixys
 ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf

IXTA06N120P IXTA06N120P

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY08N50D2MOSFET ID(on) > 800mAIXTA08N50D2 RDS(on) 4.6 IXTP08N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ - 55

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top