IXTA152N085T7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTA152N085T7 Datasheet (PDF)

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Preliminary Technical InformationVDSS = 85 VIXTA152N085T7TrenchMVTMID25 = 152 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25

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Preliminary Technical InformationVDSS = 85 VIXTA152N085TTrenchMVTMID25 = 152 AIXTP152N085TPower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

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Isc N-Channel MOSFET Transistor IXTA152N085TFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

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Linear L2TM VDSS = 500VIXTA15N50L2Power MOSFETs ID25 = 15AIXTP15N50L2 RDS(on) 480m w/ Extended FBSOAIXTH15N50L2N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 20 V

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