IXTA152N085T7 Datasheet. Specs and Replacement

Type Designator: IXTA152N085T7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 152 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO263

IXTA152N085T7 substitution

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IXTA152N085T7 datasheet

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IXTA152N085T7

Preliminary Technical Information VDSS = 85 V IXTA152N085T7 TrenchMVTM ID25 = 152 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒

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IXTA152N085T7

Preliminary Technical Information VDSS = 85 V IXTA152N085T TrenchMVTM ID25 = 152 A IXTP152N085T Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 ... See More ⇒

 2.2. Size:258K  inchange semiconductor
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IXTA152N085T7

Isc N-Channel MOSFET Transistor IXTA152N085T FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

 8.1. Size:167K  ixys
 ixta15n50l2.pdf pdf_icon

IXTA152N085T7

Linear L2TM VDSS = 500V IXTA15N50L2 Power MOSFETs ID25 = 15A IXTP15N50L2 RDS(on) 480m w/ Extended FBSOA IXTH15N50L2 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 20 V ... See More ⇒

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Detailed specifications: IXTA12N50P, IXTA130N065T2, IXTA130N10T, IXTA130N10T7, IXTA140N055T2, IXTA140P05T, IXTA14N60P, IXTA152N085T, BS170, IXTA15P15T, IXTA160N04T2, IXTA160N075T, IXTA160N075T7, IXTA160N085T, IXTA160N10T, IXTA160N10T7, IXTA16N50P

Keywords - IXTA152N085T7 MOSFET specs

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