IXTA160N04T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA160N04T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de IXTA160N04T2 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTA160N04T2 datasheet

 ..1. Size:204K  ixys
 ixta160n04t2 ixtp160n04t2.pdf pdf_icon

IXTA160N04T2

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET RDS(on) 5m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C40 V S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC

 5.1. Size:197K  ixys
 ixta160n075t7.pdf pdf_icon

IXTA160N04T2

Preliminary Technical Information VDSS = 75 V IXTA160N075T7 TrenchMVTM ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25

 5.2. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf pdf_icon

IXTA160N04T2

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25 C 16

 6.1. Size:164K  ixys
 ixta160n10t7.pdf pdf_icon

IXTA160N04T2

Preliminary Technical Information VDSS = 100 V IXTA160N10T7 TrenchMVTM ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25 C 160 A

MOSTRAR MÁS

Otros transistores... IXTA130N10T, IXTA130N10T7, IXTA140N055T2, IXTA140P05T, IXTA14N60P, IXTA152N085T, IXTA152N085T7, IXTA15P15T, IRFP250, IXTA160N075T, IXTA160N075T7, IXTA160N085T, IXTA160N10T, IXTA160N10T7, IXTA16N50P, IXTA170N075T2, IXTA180N085T