IXTA160N04T2 Todos los transistores

 

IXTA160N04T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA160N04T2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de IXTA160N04T2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IXTA160N04T2 Datasheet (PDF)

 ..1. Size:204K  ixys
 ixta160n04t2 ixtp160n04t2.pdf pdf_icon

IXTA160N04T2

Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC

 5.1. Size:197K  ixys
 ixta160n075t7.pdf pdf_icon

IXTA160N04T2

Preliminary Technical InformationVDSS = 75 VIXTA160N075T7TrenchMVTMID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

 5.2. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf pdf_icon

IXTA160N04T2

Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16

 6.1. Size:164K  ixys
 ixta160n10t7.pdf pdf_icon

IXTA160N04T2

Preliminary Technical InformationVDSS = 100 VIXTA160N10T7TrenchMVTMID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25C 160 A

MOSTRAR MÁS

Otros transistores... IXTA130N10T , IXTA130N10T7 , IXTA140N055T2 , IXTA140P05T , IXTA14N60P , IXTA152N085T , IXTA152N085T7 , IXTA15P15T , IRFP250 , IXTA160N075T , IXTA160N075T7 , IXTA160N085T , IXTA160N10T , IXTA160N10T7 , IXTA16N50P , IXTA170N075T2 , IXTA180N085T .

History: SQS460EN | AON6266E | FML20N50ES | FS100KMJ-03F | IPU60R1K0CE | AON6764 | NP60N04VDK

 

 
Back to Top

 


 
.