IXTA16N50P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA16N50P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 400 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO263

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IXTA16N50P datasheet

 ..1. Size:143K  ixys
 ixta16n50p ixtp16n50p ixtq16n50p.pdf pdf_icon

IXTA16N50P

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) 400 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C16 A

 8.1. Size:164K  ixys
 ixta160n10t7.pdf pdf_icon

IXTA16N50P

Preliminary Technical Information VDSS = 100 V IXTA160N10T7 TrenchMVTM ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25 C 160 A

 8.2. Size:197K  ixys
 ixta160n075t7.pdf pdf_icon

IXTA16N50P

Preliminary Technical Information VDSS = 75 V IXTA160N075T7 TrenchMVTM ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25

 8.3. Size:174K  ixys
 ixta160n10t ixtp160n10t.pdf pdf_icon

IXTA16N50P

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V

MOSTRAR MÁS

Otros transistores... IXTA152N085T7, IXTA15P15T, IXTA160N04T2, IXTA160N075T, IXTA160N075T7, IXTA160N085T, IXTA160N10T, IXTA160N10T7, SI2302, IXTA170N075T2, IXTA180N085T, IXTA180N085T7, IXTA180N10T, IXTA180N10T7, IXTA182N055T, IXTA182N055T7, IXTA18P10T