IXTA182N055T7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:203K ixys
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Preliminary Technical InformationVDSS = 55 VIXTA182N055T7TrenchMVTMID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25

2.1. Size:221K ixys
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Preliminary Technical InformationIXTA182N055T VDSS = 55 VTrenchMVTMIXTP182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

8.1. Size:197K ixys
ixta180n085t7.pdf pdf_icon

Preliminary Technical InformationVDSS = 85 VIXTA180N085T7TrenchMVTMID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25

8.2. Size:197K ixys
ixta180n10t7.pdf pdf_icon

PreliminaryTechnical InformationVDSS = 100 VIXTA180N10T7TrenchMVTMID25 = 180 APower MOSFET RDS(on) 6.4 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25

8.3. Size:154K ixys
ixta180n10t ixtp180n10t.pdf pdf_icon

IXTA180N10T VDSS = 100VTrenchMVTMIXTP180N10T ID25 = 180APower MOSFET RDS(on) 6.4m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 30 VID25 TC = 25C 180 AILRMS Lead Cur

8.4. Size:108K ixys
ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRM

8.5. Size:214K ixys
ixta180n085t ixtp180n085t.pdf pdf_icon

Preliminary Technical InformationIXTA180N085T VDSS = 85 VTrenchMVTMIXTP180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 T

IXTA182N055T7 Datasheet (PDF)

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