All MOSFET. IXTA182N055T7 Datasheet

 

IXTA182N055T7 Datasheet and Replacement


   Type Designator: IXTA182N055T7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 182 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 114 nC
   tr ⓘ - Rise Time: 70 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263
 

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IXTA182N055T7 Datasheet (PDF)

 ..1. Size:203K  ixys
 ixta182n055t7.pdf pdf_icon

IXTA182N055T7

Preliminary Technical InformationVDSS = 55 VIXTA182N055T7TrenchMVTMID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25

 2.1. Size:221K  ixys
 ixta182n055t ixtp182n055t.pdf pdf_icon

IXTA182N055T7

Preliminary Technical InformationIXTA182N055T VDSS = 55 VTrenchMVTMIXTP182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

 8.1. Size:197K  ixys
 ixta180n085t7.pdf pdf_icon

IXTA182N055T7

Preliminary Technical InformationVDSS = 85 VIXTA180N085T7TrenchMVTMID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25

 8.2. Size:197K  ixys
 ixta180n10t7.pdf pdf_icon

IXTA182N055T7

PreliminaryTechnical InformationVDSS = 100 VIXTA180N10T7TrenchMVTMID25 = 180 APower MOSFET RDS(on) 6.4 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25

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Datasheet: IXTA160N10T7 , IXTA16N50P , IXTA170N075T2 , IXTA180N085T , IXTA180N085T7 , IXTA180N10T , IXTA180N10T7 , IXTA182N055T , AON6380 , IXTA18P10T , IXTA1N100P , IXTA1N120P , IXTA1N80 , IXTA1N80P , IXTA1R4N100P , IXTA1R4N120P , IXTA1R6N100D2 .

History: IRFH3707PBF | SI3465DV | IXTA1R4N100P | SQD100N04-3M6L | IXTA18P10T | IRFH4210

Keywords - IXTA182N055T7 MOSFET datasheet

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