IXTA200N055T2-7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTA200N055T2-7 Datasheet (PDF)

5.1. Size:198K ixys
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Preliminary Technical InformationVDSS = 75 VIXTA200N075T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

5.2. Size:215K ixys
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Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

5.3. Size:163K ixys
ixta200n085t7.pdf pdf_icon

Preliminary Technical InformationVDSS = 85 VIXTA200N085T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C 200 A 7

5.4. Size:215K ixys
ixta200n075t ixtp200n075t.pdf pdf_icon

Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25

Otros transistores... IXTA1N120P , IXTA1N80 , IXTA1N80P , IXTA1R4N100P , IXTA1R4N120P , IXTA1R6N100D2 , IXTA1R6N50D2 , IXTA200N055T2 , STP65NF06 , IXTA200N075T , IXTA200N075T7 , IXTA200N085T , IXTA200N085T7 , IXTA220N04T2 , IXTA220N04T2-7 , IXTA220N055T , IXTA220N055T7 .