IXTA200N055T2-7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA200N055T2-7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 360 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO263

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IXTA200N055T2-7 datasheet

 5.1. Size:198K  ixys
 ixta200n075t7.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical Information VDSS = 75 V IXTA200N075T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25

 5.2. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25

 5.3. Size:163K  ixys
 ixta200n085t7.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical Information VDSS = 85 V IXTA200N085T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 C 200 A 7

 5.4. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25

MOSTRAR MÁS

Otros transistores... IXTA1N120P, IXTA1N80, IXTA1N80P, IXTA1R4N100P, IXTA1R4N120P, IXTA1R6N100D2, IXTA1R6N50D2, IXTA200N055T2, IRFZ46N, IXTA200N075T, IXTA200N075T7, IXTA200N085T, IXTA200N085T7, IXTA220N04T2, IXTA220N04T2-7, IXTA220N055T, IXTA220N055T7