All MOSFET. IXTA200N055T2-7 Datasheet

 

IXTA200N055T2-7 Datasheet and Replacement


   Type Designator: IXTA200N055T2-7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Qg ⓘ - Total Gate Charge: 109 nC
   tr ⓘ - Rise Time: 49 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
 

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IXTA200N055T2-7 Datasheet (PDF)

 5.1. Size:198K  ixys
 ixta200n075t7.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical InformationVDSS = 75 VIXTA200N075T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

 5.2. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

 5.3. Size:163K  ixys
 ixta200n085t7.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical InformationVDSS = 85 VIXTA200N085T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C 200 A 7

 5.4. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf pdf_icon

IXTA200N055T2-7

Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25

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