IXTA220N04T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA220N04T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 360 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Id|ⓘ - Corriente continua de drenaje: 220 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO263

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IXTA220N04T2 datasheet

 5.1. Size:214K  ixys
 ixta220n055t ixtp220n055t.pdf pdf_icon

IXTA220N04T2

Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T

 5.2. Size:175K  ixys
 ixta220n075t ixtp220n075t.pdf pdf_icon

IXTA220N04T2

Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

 5.3. Size:163K  ixys
 ixta220n075t7.pdf pdf_icon

IXTA220N04T2

Preliminary Technical Information VDSS = 75 V IXTA220N075T7 TrenchMVTM ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25 C 220 A 7

 5.4. Size:197K  ixys
 ixta220n055t7.pdf pdf_icon

IXTA220N04T2

Preliminary Technical Information VDSS = 55 V IXTA220N055T7 TrenchMVTM ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25

MOSTRAR MÁS

Otros transistores... IXTA1R6N100D2, IXTA1R6N50D2, IXTA200N055T2, IXTA200N055T2-7, IXTA200N075T, IXTA200N075T7, IXTA200N085T, IXTA200N085T7, AON7403, IXTA220N04T2-7, IXTA220N055T, IXTA220N055T7, IXTA220N075T, IXTA220N075T7, IXTA230N075T2, IXTA230N075T2-7, IXTA240N055T