IXTA220N04T2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTA220N04T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Id|ⓘ - Maximum Drain Current: 220 A
Qgⓘ - Total Gate Charge: 112 nC
trⓘ - Rise Time: 45 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
IXTA220N04T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTA220N04T2 Datasheet (PDF)
ixta220n055t ixtp220n055t.pdf
Preliminary Technical InformationIXTA220N055T VDSS = 55 VTrenchMVTMIXTP220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T
ixta220n075t ixtp220n075t.pdf
Preliminary Technical InformationIXTA220N075T VDSS = 75 VTrenchMVTMIXTP220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2
ixta220n075t7.pdf
Preliminary Technical InformationVDSS = 75 VIXTA220N075T7TrenchMVTMID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25C 220 A 7
ixta220n055t7.pdf
Preliminary Technical InformationVDSS = 55 VIXTA220N055T7TrenchMVTMID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25
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