IXTH130N15T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH130N15T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 750 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: TO247
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IXTH130N15T datasheet
ixth130n10t ixtq130n10t.pdf
VDSS = 100V IXTH130N10T TrenchMVTM ID25 = 130A IXTQ130N10T Power MOSFET RDS(on) 9.1m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 100 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 130 A ILRMS Lead C
ixth130n10t.pdf
isc N-Channel MOSFET Transistor IXTH130N10T FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V G
ixth130n20t.pdf
Preliminary Technical Information IXTH130N20T VDSS = 200V TrenchHVTM ID25 = 130A Power MOSFET RDS(on) 16m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1M 200 V VGSM Transient 30 V ID25 TC = 25 C 130 A ILRMS Lead Current Limit, RMS
Otros transistores... IXTH110N10L2, IXTH110N25T, IXTH120P065T, IXTH12N100L, IXTH12N100Q, IXTH12N120, IXTH12N140, IXTH130N10T, IRLZ44N, IXTH130N20T, IXTH140P05T, IXTH150N17T, IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T
History: IXFX64N60P
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