All MOSFET. IXTH130N15T Datasheet

 

IXTH130N15T Datasheet and Replacement


   Type Designator: IXTH130N15T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 750 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 113 nC
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO247
 

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IXTH130N15T Datasheet (PDF)

 5.1. Size:142K  ixys
 ixth130n10t ixtq130n10t.pdf pdf_icon

IXTH130N15T

VDSS = 100VIXTH130N10TTrenchMVTMID25 = 130AIXTQ130N10TPower MOSFET RDS(on) 9.1m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 100 VD(TAB)SVDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 20 VTO-3P (IXTQ)ID25 TC = 25C 130 AILRMS Lead C

 5.2. Size:260K  inchange semiconductor
 ixth130n10t.pdf pdf_icon

IXTH130N15T

isc N-Channel MOSFET Transistor IXTH130N10TFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV G

 6.1. Size:126K  ixys
 ixth130n20t.pdf pdf_icon

IXTH130N15T

Preliminary Technical InformationIXTH130N20T VDSS = 200VTrenchHVTMID25 = 130APower MOSFET RDS(on) 16m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C; RGS = 1M 200 VVGSM Transient 30 VID25 TC = 25C 130 AILRMS Lead Current Limit, RMS

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History: FSS234R | IXTH160N10T

Keywords - IXTH130N15T MOSFET datasheet

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