IXTH150N17T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH150N17T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 830 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 175 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO247

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IXTH150N17T datasheet

 8.1. Size:681K  1
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IXTH150N17T

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IXTH150N17T

IXTH15N70 PCB 24 IXTH 15N70 VDSS = 700 V MegaMOSTMFET ID (cont) = 15 A RDS(on) = 0.45 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C; RGS = 1 M 700 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 T

 8.3. Size:316K  ixys
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IXTH150N17T

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 8.4. Size:184K  ixys
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IXTH150N17T

Preliminary Technical Information IXTH152N085T VDSS = 85 V TrenchMVTM IXTQ152N085T ID25 = 152 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 152 A ILRMS L

MOSTRAR MÁS

Otros transistores... IXTH12N100L, IXTH12N100Q, IXTH12N120, IXTH12N140, IXTH130N10T, IXTH130N15T, IXTH130N20T, IXTH140P05T, IRFP260N, IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T, IXTH16N10D2, IXTH16N20D2, IXTH16N50D2