IXTH150N17T Todos los transistores

 

IXTH150N17T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH150N17T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 830 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 175 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO247
 

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IXTH150N17T Datasheet (PDF)

 8.1. Size:681K  1
 ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf pdf_icon

IXTH150N17T

 8.2. Size:148K  ixys
 ixth15n70.pdf pdf_icon

IXTH150N17T

IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T

 8.3. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH150N17T

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 8.4. Size:184K  ixys
 ixth152n085t ixtq152n085t.pdf pdf_icon

IXTH150N17T

Preliminary Technical InformationIXTH152N085T VDSS = 85 VTrenchMVTMIXTQ152N085T ID25 = 152 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25C 152 AILRMS L

MOSTRAR MÁS

Otros transistores... IXTH12N100L , IXTH12N100Q , IXTH12N120 , IXTH12N140 , IXTH130N10T , IXTH130N15T , IXTH130N20T , IXTH140P05T , 10N60 , IXTH152N085T , IXTH15N50L2 , IXTH160N075T , IXTH160N10T , IXTH160N15T , IXTH16N10D2 , IXTH16N20D2 , IXTH16N50D2 .

History: NCE70N1K1K | STL90N3LLH6 | AP72T02GH | STU336S

 

 
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