All MOSFET. IXTH150N17T Datasheet

 

IXTH150N17T Datasheet and Replacement


   Type Designator: IXTH150N17T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 175 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 120 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO247
 

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IXTH150N17T Datasheet (PDF)

 8.1. Size:681K  1
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IXTH150N17T

 8.2. Size:148K  ixys
 ixth15n70.pdf pdf_icon

IXTH150N17T

IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T

 8.3. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH150N17T

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 8.4. Size:184K  ixys
 ixth152n085t ixtq152n085t.pdf pdf_icon

IXTH150N17T

Preliminary Technical InformationIXTH152N085T VDSS = 85 VTrenchMVTMIXTQ152N085T ID25 = 152 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25C 152 AILRMS L

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Datasheet: IXTH12N100L , IXTH12N100Q , IXTH12N120 , IXTH12N140 , IXTH130N10T , IXTH130N15T , IXTH130N20T , IXTH140P05T , IRFP260N , IXTH152N085T , IXTH15N50L2 , IXTH160N075T , IXTH160N10T , IXTH160N15T , IXTH16N10D2 , IXTH16N20D2 , IXTH16N50D2 .

Keywords - IXTH150N17T MOSFET datasheet

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