IXTH150N17T Datasheet. Specs and Replacement

Type Designator: IXTH150N17T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 830 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 175 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO247

IXTH150N17T substitution

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IXTH150N17T datasheet

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 ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf pdf_icon

IXTH150N17T

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 ixth15n70.pdf pdf_icon

IXTH150N17T

IXTH15N70 PCB 24 IXTH 15N70 VDSS = 700 V MegaMOSTMFET ID (cont) = 15 A RDS(on) = 0.45 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C; RGS = 1 M 700 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 T... See More ⇒

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IXTH150N17T

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IXTH150N17T

Preliminary Technical Information IXTH152N085T VDSS = 85 V TrenchMVTM IXTQ152N085T ID25 = 152 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 152 A ILRMS L... See More ⇒

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Detailed specifications: IXTH12N100L, IXTH12N100Q, IXTH12N120, IXTH12N140, IXTH130N10T, IXTH130N15T, IXTH130N20T, IXTH140P05T, IRFP260N, IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T, IXTH16N10D2, IXTH16N20D2, IXTH16N50D2

Keywords - IXTH150N17T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.