IXTH3N120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTH3N120
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 700 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET IXTH3N120

IXTH3N120 Datasheet (PDF)

..1. Size:131K ixys
ixth3n120.pdf

High VoltageVDSS = 1200 VIXTH 3N120Power MOSFETsID25 = 3 AN-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 150C 3N120 1200 V3N110 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 3N120 1200 V3N110 1100 VVGS Continuous 20 VG D (TAB)DVGSM Transient 30 V

..2. Size:175K ixys
ixta3n120 ixtp3n120 ixth3n120.pdf

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

7.1. Size:152K ixys
ixth3n150.pdf

High Voltage VDSS = 1500VIXTH3N150ID25 = 3APower MOSFET RDS(on) 7.3 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG = Gate D = Dr

7.2. Size:150K ixys
ixta3n100p ixth3n100p ixtp3n100p.pdf

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

8.1. Size:201K ixys
ixth3n200p3hv ixtt3n200p3hv.pdf

Advance Technical InformationHigh Voltage VDSS = 2000VIXTT3N200P3HVPower MOSFETID25 = 3AIXTH3N200P3HV RDS(on) 8 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M 2000 VVGSS Continuous 20 VVG

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: