IXTH3N120 datasheet, аналоги, основные параметры

Наименование производителя: IXTH3N120

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 100 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 700 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm

Тип корпуса: TO247

Аналог (замена) для IXTH3N120

- подборⓘ MOSFET транзистора по параметрам

 

IXTH3N120 даташит

 ..1. Size:131K  ixys
 ixth3n120.pdf pdf_icon

IXTH3N120

High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 150 C 3N120 1200 V 3N110 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V

 ..2. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf pdf_icon

IXTH3N120

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous

 7.1. Size:152K  ixys
 ixth3n150.pdf pdf_icon

IXTH3N120

High Voltage VDSS = 1500V IXTH3N150 ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G = Gate D = Dr

 7.2. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf pdf_icon

IXTH3N120

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB)

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IXTH30N60L2, IXTH30N60P, IXTH32P20T, IXTH360N055T2, IXTH36N50P, IXTH36P10, IXTH36P15P, IXTH3N100P, 5N60, IXTH3N150, IXTH40N50L2, IXTH41N25, IXTH420N04T2, IXTH440N055T2, IXTH44P15T, IXTH450P2, IXTH460P2