IXTH50N30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH50N30

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 400 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 360 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TO247

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IXTH50N30 datasheet

 7.1. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTH50N30

IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET RDS(on) 60m N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M

 7.2. Size:111K  ixys
 ixth50n20 ixtm50n20.pdf pdf_icon

IXTH50N30

IXTH 50N20 VDSS = 200 V MegaMOSTMFET IXTM 50N20 ID25 = 50 A RDS(on) = 45 m N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C50 A TO-204 AE (IXTM) IDM TC = 25 C, pulse width limited b

 7.3. Size:378K  ixys
 ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf pdf_icon

IXTH50N30

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MOSTRAR MÁS

Otros transistores... IXTH44P15T, IXTH450P2, IXTH460P2, IXTH48N20, IXTH48P20P, IXTH4N150, IXTH500N04T2, IXTH50N25T, AO3400A, IXTH50P085, IXTH50P10, IXTH52P10P, IXTH60N10, IXTH60N15, IXTH60N20L2, IXTH60N25, IXTH68P20T