IXTH50N30 Todos los transistores

 

IXTH50N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH50N30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 360 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO247
 

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IXTH50N30 Datasheet (PDF)

 7.1. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTH50N30

IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

 7.2. Size:111K  ixys
 ixth50n20 ixtm50n20.pdf pdf_icon

IXTH50N30

IXTH 50N20 VDSS = 200 VMegaMOSTMFETIXTM 50N20 ID25 = 50 ARDS(on) = 45 mN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C50 ATO-204 AE (IXTM)IDM TC = 25C, pulse width limited b

 7.3. Size:378K  ixys
 ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf pdf_icon

IXTH50N30

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MOSTRAR MÁS

Otros transistores... IXTH44P15T , IXTH450P2 , IXTH460P2 , IXTH48N20 , IXTH48P20P , IXTH4N150 , IXTH500N04T2 , IXTH50N25T , RU6888R , IXTH50P085 , IXTH50P10 , IXTH52P10P , IXTH60N10 , IXTH60N15 , IXTH60N20L2 , IXTH60N25 , IXTH68P20T .

History: NCE0159 | IPD60R1K5CE | NTMFS4C054N | 6N70KL-TF1-T | RJK1209JPE | CHM4435AZGP | ME6874-G

 

 
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