IXTH50N30 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IXTH50N30
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 400 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 360 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: TO247
Аналог (замена) для IXTH50N30
IXTH50N30 Datasheet (PDF)
ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf

IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M
ixth50n20 ixtm50n20.pdf

IXTH 50N20 VDSS = 200 VMegaMOSTMFETIXTM 50N20 ID25 = 50 ARDS(on) = 45 mN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C50 ATO-204 AE (IXTM)IDM TC = 25C, pulse width limited b
ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf

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Другие MOSFET... IXTH44P15T , IXTH450P2 , IXTH460P2 , IXTH48N20 , IXTH48P20P , IXTH4N150 , IXTH500N04T2 , IXTH50N25T , RU6888R , IXTH50P085 , IXTH50P10 , IXTH52P10P , IXTH60N10 , IXTH60N15 , IXTH60N20L2 , IXTH60N25 , IXTH68P20T .
History: HCD90R800 | 2SK2715TL | SSG4410N | P5506HVA | IXTN32P60P | IPL60R199CP | IXTH50N25T
History: HCD90R800 | 2SK2715TL | SSG4410N | P5506HVA | IXTN32P60P | IPL60R199CP | IXTH50N25T



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