IXTH60N25 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTH60N25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 400 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 300 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
Encapsulados: TO247
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IXTH60N25 datasheet
ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf
Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 RDS(on) 45m FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS
ixth60n20l2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH60N20L2 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25
ixth60n15.pdf
isc N-Channel MOSFET Transistor IXTH60N15 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gat
Otros transistores... IXTH50N25T, IXTH50N30, IXTH50P085, IXTH50P10, IXTH52P10P, IXTH60N10, IXTH60N15, IXTH60N20L2, IRF830, IXTH68P20T, IXTH6N100D2, IXTH6N120, IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, IXTH75N15
History: IXTH72N20
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