IXTH60N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTH60N25 Datasheet (PDF)

6.1. Size:149K ixys
ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf pdf_icon

Advance Technical InformationLinear L2TM Power VDSS = 200VIXTT60N20L2MOSFET w/ Extended ID25 = 60AIXTQ60N20L2 RDS(on) 45m FBSOAIXTH60N20L2TO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS

6.2. Size:211K inchange semiconductor
ixth60n20l2.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH60N20L2FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

7.1. Size:260K inchange semiconductor
ixth60n15.pdf pdf_icon

isc N-Channel MOSFET Transistor IXTH60N15FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gat

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