IXTH60N25 Datasheet. Specs and Replacement
Type Designator: IXTH60N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO247
IXTH60N25 substitution
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IXTH60N25 datasheet
ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf
Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 RDS(on) 45m FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS... See More ⇒
ixth60n20l2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH60N20L2 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
ixth60n15.pdf
isc N-Channel MOSFET Transistor IXTH60N15 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gat... See More ⇒
Detailed specifications: IXTH50N25T, IXTH50N30, IXTH50P085, IXTH50P10, IXTH52P10P, IXTH60N10, IXTH60N15, IXTH60N20L2, IRF830, IXTH68P20T, IXTH6N100D2, IXTH6N120, IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, IXTH75N15
Keywords - IXTH60N25 MOSFET specs
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