IXTH76N25T Todos los transistores

 

IXTH76N25T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH76N25T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 460 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 148 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: TO247
 

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IXTH76N25T Datasheet (PDF)

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH76N25T

VDSS ID25 RDS(on)IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFETIXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C 7P50 -7 A8P50 -8 AIDM TC = 25C, pulse w

 9.2. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTH76N25T

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

 9.3. Size:112K  ixys
 ixtt72n10 ixth72n10.pdf pdf_icon

IXTH76N25T

Advance Technical InformationIXTH 72N20 VDSS = 200 VHigh CurrentIXTT 72N20 ID25 = 72 APower MOSFET RDS(on) = 33 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C72 AIDM TC =

 9.4. Size:583K  ixys
 ixth75n15 ixtt75n15.pdf pdf_icon

IXTH76N25T

IXTH 75N15 VDSS = 150 VHigh CurrentIXTT 75N15 ID25 = 75 APower MOSFET RDS(on) = 23 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 M 150 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C75 AIDM TC = 25C, pulse width limited by T

MOSTRAR MÁS

Otros transistores... IXTH68P20T , IXTH6N100D2 , IXTH6N120 , IXTH6N150 , IXTH6N50D2 , IXTH72N20 , IXTH75N10L2 , IXTH75N15 , HY1906P , IXTH76P10T , IXTH80N20L , IXTH86N25T , IXTH88N15 , IXTH88N30P , IXTH90N15T , IXTH90P10P , IXTH96N20P .

History: JCS7HN65B | IXFT86N30T | PHK4NQ20T | IRFS723 | ME70N03S-G | DH400P06F | IPB180N08S4-02

 

 
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