IXTH76P10T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH76P10T

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 298 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 76 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO247

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IXTH76P10T datasheet

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH76P10T

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w

 9.2. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTH76P10T

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30

 9.3. Size:112K  ixys
 ixtt72n10 ixth72n10.pdf pdf_icon

IXTH76P10T

Advance Technical Information IXTH 72N20 VDSS = 200 V High Current IXTT 72N20 ID25 = 72 A Power MOSFET RDS(on) = 33 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C72 A IDM TC =

 9.4. Size:583K  ixys
 ixth75n15 ixtt75n15.pdf pdf_icon

IXTH76P10T

IXTH 75N15 VDSS = 150 V High Current IXTT 75N15 ID25 = 75 A Power MOSFET RDS(on) = 23 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C75 A IDM TC = 25 C, pulse width limited by T

MOSTRAR MÁS

Otros transistores... IXTH6N100D2, IXTH6N120, IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, IXTH75N15, IXTH76N25T, AO4407A, IXTH80N20L, IXTH86N25T, IXTH88N15, IXTH88N30P, IXTH90N15T, IXTH90P10P, IXTH96N20P, IXTH96N25T