IXTH86N25T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH86N25T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 540 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Id|ⓘ - Corriente continua de drenaje: 86 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 156 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm

Encapsulados: TO247

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IXTH86N25T datasheet

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH86N25T

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w

 9.2. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTH86N25T

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK)

 9.3. Size:113K  ixys
 ixth80n65x2.pdf pdf_icon

IXTH86N25T

Advance Technical Information X2-Class VDSS = 650V IXTH80N65X2 Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings D S D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G = Gate D = Drain S = Source Tab = Drain VGSS Contin

 9.4. Size:515K  ixys
 ixth8p50 ixtt8p50.pdf pdf_icon

IXTH86N25T

IXTH 8P50 VDSS = -500 V Standard Power IXTT 8P50 ID25 = -8 A MOSFET RDS(on) = 1.2 P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) ID25 TC = 25 C-8 A IDM TC = 25

MOSTRAR MÁS

Otros transistores... IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, IXTH75N15, IXTH76N25T, IXTH76P10T, IXTH80N20L, IRFP064N, IXTH88N15, IXTH88N30P, IXTH90N15T, IXTH90P10P, IXTH96N20P, IXTH96N25T, IXTH96P085T, IXTJ36N20