IXTH86N25T datasheet, аналоги, основные параметры

Наименование производителя: IXTH86N25T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 540 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 86 A

Электрические характеристики

tr ⓘ - Время нарастания: 156 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.037 Ohm

Тип корпуса: TO247

Аналог (замена) для IXTH86N25T

- подборⓘ MOSFET транзистора по параметрам

 

IXTH86N25T даташит

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH86N25T

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w

 9.2. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTH86N25T

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK)

 9.3. Size:113K  ixys
 ixth80n65x2.pdf pdf_icon

IXTH86N25T

Advance Technical Information X2-Class VDSS = 650V IXTH80N65X2 Power MOSFETTM ID25 = 80A RDS(on) 40m N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings D S D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G = Gate D = Drain S = Source Tab = Drain VGSS Contin

 9.4. Size:515K  ixys
 ixth8p50 ixtt8p50.pdf pdf_icon

IXTH86N25T

IXTH 8P50 VDSS = -500 V Standard Power IXTT 8P50 ID25 = -8 A MOSFET RDS(on) = 1.2 P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) ID25 TC = 25 C-8 A IDM TC = 25

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, IXTH75N15, IXTH76N25T, IXTH76P10T, IXTH80N20L, IRFP064N, IXTH88N15, IXTH88N30P, IXTH90N15T, IXTH90P10P, IXTH96N20P, IXTH96N25T, IXTH96P085T, IXTJ36N20