IXTL2x180N10T Todos los transistores

 

IXTL2x180N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTL2x180N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm
   Paquete / Cubierta: ISOPLUSI5PAK
 

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IXTL2x180N10T Datasheet (PDF)

 ..1. Size:66K  ixys
 ixtl2x180n10t.pdf pdf_icon

IXTL2x180N10T

Advance Technical InformationTrenchMVTMIXTL2x180N10TVDSS = 100 VID25 = 2x100 APower MOSFETs RDS(on) 7.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGISOPLUS i5-PakTM (IXTL)Avalanche RatedS G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175

 8.1. Size:66K  ixys
 ixtl2x240n055t.pdf pdf_icon

IXTL2x180N10T

Advance Technical InformationIXTL2x240N055T VDSS =55 VTrenchMVTMID25 = 2x140 APower MOSFETs RDS(on) 4.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated RG RGISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RG

 8.2. Size:66K  ixys
 ixtl2x220n075t.pdf pdf_icon

IXTL2x180N10T

Advance Technical InformationTrenchMVTM IXTL2x220N075T VDSS = 75 VID25 = 2x120 APower MOSFETs RDS(on) 5.5 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; R

 8.3. Size:66K  ixys
 ixtl2x200n085t.pdf pdf_icon

IXTL2x180N10T

Advance Technical InformationTrenchMVTMIXTL2x200N085TVDSS = 85 VID25 = 2x112 APower MOSFETs RDS(on) 6.0 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C;

MOSTRAR MÁS

Otros transistores... IXTK75N30 , IXTK80N25 , IXTK82N25P , IXTK88N30P , IXTK8N150L , IXTK90N15 , IXTK90N25L2 , IXTK90P20P , 4N60 , IXTL2x200N085T , IXTL2x220N075T , IXTL2x240N055T , IXTN110N20L2 , IXTN120N25 , IXTN170P10P , IXTN17N120L , IXTN200N10L2 .

History: IXFN170N30P | IPD60R1K5CE | NTMFS4C054N | CHM62A2PAGP | FQAF7N90 | CHM4435AZGP | IXTH50N30

 

 
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