IXTP160N04T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP160N04T2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO220

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IXTP160N04T2 datasheet

 ..1. Size:204K  ixys
 ixta160n04t2 ixtp160n04t2.pdf pdf_icon

IXTP160N04T2

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET RDS(on) 5m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C40 V S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC

 5.1. Size:133K  ixys
 ixtp160n085t.pdf pdf_icon

IXTP160N04T2

Advance Technical Information IXTQ 160N085T VDSS = 85 V Trench Gate IXTA 160N085T ID25 = 160 A Power MOSFET IXTP 160N085T RDS(on) = 6.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 160 A IDRM

 5.2. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf pdf_icon

IXTP160N04T2

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25 C 16

 6.1. Size:174K  ixys
 ixta160n10t ixtp160n10t.pdf pdf_icon

IXTP160N04T2

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V

MOSTRAR MÁS

Otros transistores... IXTP130N10T, IXTP140N055T2, IXTP140P05T, IXTP14N60P, IXTP14N60PM, IXTP152N085T, IXTP15N50L2, IXTP15P15T, IRF840, IXTP160N075T, IXTP160N10T, IXTP16N50P, IXTP16N50PM, IXTP170N075T2, IXTP180N085T, IXTP180N10T, IXTP182N055T