IXTP16N50PM Todos los transistores

 

IXTP16N50PM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP16N50PM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 43 nC
   trⓘ - Tiempo de subida: 400 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
   Paquete / Cubierta: TO220

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IXTP16N50PM Datasheet (PDF)

 4.1. Size:143K  ixys
ixta16n50p ixtp16n50p ixtq16n50p.pdf

IXTP16N50PM
IXTP16N50PM

IXTA 16N50P VDSS = 500 VPolarHVTMIXTP 16N50P ID25 = 16 APower MOSFETIXTQ 16N50P RDS(on) 400 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25C16 A

 8.1. Size:133K  ixys
ixtp160n085t.pdf

IXTP16N50PM
IXTP16N50PM

Advance Technical InformationIXTQ 160N085T VDSS = 85 VTrench GateIXTA 160N085T ID25 = 160 APower MOSFETIXTP 160N085T RDS(on) = 6.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VGVDGR TJ = 25C to 175C; RGS = 1 M 85 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 160 AIDRM

 8.2. Size:174K  ixys
ixta160n10t ixtp160n10t.pdf

IXTP16N50PM
IXTP16N50PM

Preliminary Technical InformationIXTA160N10T VDSS = 100 VTrenchMVTMIXTP160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V

 8.3. Size:174K  ixys
ixta160n075t ixtp160n075t.pdf

IXTP16N50PM
IXTP16N50PM

Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16

 8.4. Size:204K  ixys
ixta160n04t2 ixtp160n04t2.pdf

IXTP16N50PM
IXTP16N50PM

Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC

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