IXTP16N50PM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP16N50PM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 400 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de IXTP16N50PM MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTP16N50PM datasheet

 4.1. Size:143K  ixys
 ixta16n50p ixtp16n50p ixtq16n50p.pdf pdf_icon

IXTP16N50PM

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) 400 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C16 A

 8.1. Size:133K  ixys
 ixtp160n085t.pdf pdf_icon

IXTP16N50PM

Advance Technical Information IXTQ 160N085T VDSS = 85 V Trench Gate IXTA 160N085T ID25 = 160 A Power MOSFET IXTP 160N085T RDS(on) = 6.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 160 A IDRM

 8.2. Size:174K  ixys
 ixta160n10t ixtp160n10t.pdf pdf_icon

IXTP16N50PM

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V

 8.3. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf pdf_icon

IXTP16N50PM

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25 C 16

MOSTRAR MÁS

Otros transistores... IXTP14N60PM, IXTP152N085T, IXTP15N50L2, IXTP15P15T, IXTP160N04T2, IXTP160N075T, IXTP160N10T, IXTP16N50P, 50N06, IXTP170N075T2, IXTP180N085T, IXTP180N10T, IXTP182N055T, IXTP18N60PM, IXTP18P10T, IXTP1N100P, IXTP1N120P