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IXTP16N50PM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTP16N50PM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Qgⓘ - Общий заряд затвора: 43 nC
   trⓘ - Время нарастания: 400 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.42 Ohm
   Тип корпуса: TO220

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IXTP16N50PM Datasheet (PDF)

 4.1. Size:143K  ixys
 ixta16n50p ixtp16n50p ixtq16n50p.pdf

IXTP16N50PM IXTP16N50PM

IXTA 16N50P VDSS = 500 VPolarHVTMIXTP 16N50P ID25 = 16 APower MOSFETIXTQ 16N50P RDS(on) 400 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25C16 A

 8.1. Size:133K  ixys
 ixtp160n085t.pdf

IXTP16N50PM IXTP16N50PM

Advance Technical InformationIXTQ 160N085T VDSS = 85 VTrench GateIXTA 160N085T ID25 = 160 APower MOSFETIXTP 160N085T RDS(on) = 6.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VGVDGR TJ = 25C to 175C; RGS = 1 M 85 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 160 AIDRM

 8.2. Size:174K  ixys
 ixta160n10t ixtp160n10t.pdf

IXTP16N50PM IXTP16N50PM

Preliminary Technical InformationIXTA160N10T VDSS = 100 VTrenchMVTMIXTP160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V

 8.3. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf

IXTP16N50PM IXTP16N50PM

Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16

 8.4. Size:204K  ixys
 ixta160n04t2 ixtp160n04t2.pdf

IXTP16N50PM IXTP16N50PM

Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC

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