IXTP1N120P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP1N120P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 900 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 20 Ohm

Encapsulados: TO220

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IXTP1N120P datasheet

 7.1. Size:95K  ixys
 ixta1n100p ixtp1n100p.pdf pdf_icon

IXTP1N120P

Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET RDS(on) = 13 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V S (TAB) VGSM Transient 30 V ID25 TC = 25 C

 7.2. Size:535K  ixys
 ixta1n100 ixtp1n100.pdf pdf_icon

IXTP1N120P

VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 30 V D (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C 1.5 A IDM TC =

 8.1. Size:60K  ixys
 ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTP1N120P

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode RDS(on) = 11 Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 T

 8.2. Size:161K  ixys
 ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf pdf_icon

IXTP1N120P

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET RDS(on) 14 IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25 C to 150 C 800 V VD

MOSTRAR MÁS

Otros transistores... IXTP16N50PM, IXTP170N075T2, IXTP180N085T, IXTP180N10T, IXTP182N055T, IXTP18N60PM, IXTP18P10T, IXTP1N100P, IRFP260N, IXTP1N80, IXTP1N80P, IXTP1R4N100P, IXTP1R4N120P, IXTP1R4N60P, IXTP1R6N100D2, IXTP1R6N50D2, IXTP1R6N50P