IXTP450P2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP450P2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm

Encapsulados: TO220

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IXTP450P2 datasheet

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 ixtp450p2 ixth450p2 ixtq450p2.pdf pdf_icon

IXTP450P2

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 RDS(on) 330m IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RG

 ..2. Size:259K  inchange semiconductor
 ixtp450p2.pdf pdf_icon

IXTP450P2

isc N-Channel MOSFET Transistor IXTP450P2 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 9.1. Size:238K  ixys
 ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf pdf_icon

IXTP450P2

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G

 9.2. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf pdf_icon

IXTP450P2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V

MOSTRAR MÁS

Otros transistores... IXTP3N120, IXTP3N50D2, IXTP3N50P, IXTP3N60P, IXTP42N15T, IXTP42N25P, IXTP44N10T, IXTP44P15T, IRF1407, IXTP460P2, IXTP48N20T, IXTP48P05T, IXTP4N60P, IXTP4N80P, IXTP50N085T, IXTP50N20P, IXTP50N20PM