Справочник MOSFET. IXTP450P2

 

IXTP450P2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IXTP450P2

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4.5 V

Максимально допустимый постоянный ток стока (Id): 16 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 43 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.33 Ohm

Тип корпуса: TO220

Аналог (замена) для IXTP450P2

 

IXTP450P2 Datasheet (PDF)

1.1. ixtp450p2 ixth450p2 ixtq450p2.pdf Size:111K _ixys

IXTP450P2 IXTP450P2

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 ? ? RDS(on) ? ? ? 330m? ? ? ? ? IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Co

5.1. ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf Size:238K _ixys

IXTP450P2 IXTP450P2

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2   RDS(on)    850m     IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25C to 150C 650 V TO-263 (IXTA) VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V G

5.2. ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf Size:154K _ixys

IXTP450P2 IXTP450P2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 ? ? RDS(on) ? ? ? 270m? ? ? ? ? IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to

 5.3. ixtm4n80 ixtm4n80a ixtm4n90 ixtm4n90a ixtp4n80 ixtp4n80a ixtp4n90 ixtp4n90a.pdf Size:64K _ixys

IXTP450P2



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IXTP450P2



 5.5. ixta42n25p ixtp42n25p ixtq42n25p.pdf Size:252K _ixys

IXTP450P2 IXTP450P2

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET ? ? IXTQ 42N25P RDS(on) ? 84 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 30 V ID25 TC = 25 C42 A IDM T

5.6. ixtm4n100 ixtm4n100a ixtm4n95 ixtm4n95a ixtp4n100 ixtp4n100a ixtp4n95 ixtp4n95a.pdf Size:66K _ixys

IXTP450P2



5.7. ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf Size:141K _ixys

IXTP450P2 IXTP450P2

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) ? 2.0 ? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C4 A IDM T

5.8. ixtp44n10t ixty44n10t.pdf Size:187K _ixys

IXTP450P2 IXTP450P2

Preliminary Technical Information IXTP44N10T VDSS = 100 V TrenchMVTM IXTY44N10T ID25 = 44 A Power MOSFET ? ? RDS(on) ? 30 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S TO-252 AA (IXTY) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V G VGSM Transient 30 V S D (TAB) I

Другие MOSFET... IXTP3N120 , IXTP3N50D2 , IXTP3N50P , IXTP3N60P , IXTP42N15T , IXTP42N25P , IXTP44N10T , IXTP44P15T , IRF640N , IXTP460P2 , IXTP48N20T , IXTP48P05T , IXTP4N60P , IXTP4N80P , IXTP50N085T , IXTP50N20P , IXTP50N20PM .

 

 
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