IXTP5N60P Todos los transistores

 

IXTP5N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP5N60P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 500 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: TO220
 

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IXTP5N60P Datasheet (PDF)

 ..1. Size:120K  ixys
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IXTP5N60P

VDSS = 600 VIXTA 5N60PPolarHVTMID25 = 5 AIXTP 5N60PPower MOSFET RDS(on) 1.7 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C 600 VVDGR TJ = 25C to 175C; RGS = 1 M 600 VVGSS Continuous 30 VGVGSM Transient 40 VS(TAB)ID25 TC = 25C5 ATO-220 (I

 9.1. Size:186K  ixys
 ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf pdf_icon

IXTP5N60P

PolarPTM VDSS = - 100VIXTA52P10PID25 = - 52APower MOSFETsIXTP52P10P RDS(on) 50m IXTQ52P10PP-Channel Enhancement ModeAvalanche RatedIXTH52P10PTO-3P (IXTQ)TO-263 AA (IXTA) TO-220AB (IXTP)DGGGSDG SSD (Tab)D D (Tab)S TabSymbol Test Conditions Maximum Ratings TO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 2

 9.2. Size:171K  ixys
 ixtp50n085t ixty50n085t.pdf pdf_icon

IXTP5N60P

Preliminary Technical InformationIXTP50N085T VDSS = 85 VTrenchMVTMIXTY50N085T ID25 = 50 APower MOSFET RDS(on) 23 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VGVGSM Transient 20 V

 9.3. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTP5N60P

IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

MOSTRAR MÁS

Otros transistores... IXTP50N20P , IXTP50N20PM , IXTP50N25T , IXTP50N28T , IXTP52P10P , IXTP55N075T , IXTP56N15T , IXTP5N50P , AO3401 , IXTP60N10T , IXTP60N10TM , IXTP60N20T , IXTP60N28TM-A , IXTP62N15P , IXTP64N055T , IXTP6N100D2 , IXTP6N50D2 .

History: IRF7807TRPBF-1 | VN1206N5 | APT1201R4BLL

 

 
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