IXTP80N10T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTP80N10T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Encapsulados: TO220
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IXTP80N10T datasheet
ixta80n10t ixtp80n10t.pdf
TrenchMVTM VDSS = 100V IXTA80N10T Power MOSFET ID25 = 80A IXTP80N10T RDS(on) 14m N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V TO-220AB (IXTP) VGSS Continuous 20 V VGSM Transien
ixtp80n10t.pdf
isc N-Channel MOSFET Transistor IXTP80N10T FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
ixtp80n12t2.pdf
IXTP80N12T2 www.VBsemi.com N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 85 0.0100 at VGS = 6 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S Top View N-Channel
ixtp80n12t2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTP80N12T2 FEATURES Drain-Source On-Resistance R
Otros transistores... IXTP70N075T2, IXTP70N085T, IXTP75N10P, IXTP76N075T, IXTP76N25T, IXTP76P10T, IXTP7N60P, IXTP7N60PM, AOD4184A, IXTP80N12T2, IXTP86N20T, IXTP88N085T, IXTP8N50P, IXTP8N50PM, IXTP90N055T, IXTP90N055T2, IXTP90N075T2
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