IXTP80N10T Todos los transistores

 

IXTP80N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP80N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO220
 

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IXTP80N10T Datasheet (PDF)

 ..1. Size:184K  ixys
 ixta80n10t ixtp80n10t.pdf pdf_icon

IXTP80N10T

TrenchMVTM VDSS = 100VIXTA80N10TPower MOSFET ID25 = 80AIXTP80N10T RDS(on) 14m N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-220AB (IXTP)VGSS Continuous 20 VVGSM Transien

 ..2. Size:259K  inchange semiconductor
 ixtp80n10t.pdf pdf_icon

IXTP80N10T

isc N-Channel MOSFET Transistor IXTP80N10TFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 6.1. Size:305K  cn vbsemi
 ixtp80n12t2.pdf pdf_icon

IXTP80N10T

IXTP80N12T2www.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC850.0100 at VGS = 6 VTO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S Top ViewN-Channel

 6.2. Size:206K  inchange semiconductor
 ixtp80n12t2.pdf pdf_icon

IXTP80N10T

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTP80N12T2FEATURESDrain-Source On-Resistance: R

MOSTRAR MÁS

Otros transistores... IXTP70N075T2 , IXTP70N085T , IXTP75N10P , IXTP76N075T , IXTP76N25T , IXTP76P10T , IXTP7N60P , IXTP7N60PM , HY1906P , IXTP80N12T2 , IXTP86N20T , IXTP88N085T , IXTP8N50P , IXTP8N50PM , IXTP90N055T , IXTP90N055T2 , IXTP90N075T2 .

History: CEB02N6G

 

 
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