IXTP88N085T Todos los transistores

 ..1. Size:217K  ixys
 ixta88n085t ixtp88n085t.pdf

Preliminary Technical Information IXTA88N085T VDSS = 85 V TrenchMVTM IXTP88N085T ID25 = 88 A Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 TC =

 9.1. Size:106K  ixys
 ixtp8n50pm.pdf

Preliminary Technical Information IXTP 8N50PM VDSS = 500 V PolarHVTM ID25 = 4 A Power MOSFET RDS(on) 0.8 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS

 9.2. Size:238K  ixys
 ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf

Preliminary Technical Information X2-Class VDSS = 650V IXTY8N65X2 Power MOSFET ID25 = 8A IXTA8N65X2 RDS(on) 500m IXTP8N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G

 9.3. Size:184K  ixys
 ixta80n10t ixtp80n10t.pdf

TrenchMVTM VDSS = 100V IXTA80N10T Power MOSFET ID25 = 80A IXTP80N10T RDS(on) 14m N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V TO-220AB (IXTP) VGSS Continuous 20 V VGSM Transien

 9.4. Size:116K  ixys
 ixtp8n65x2m.pdf

Advance Technical Information X2-Class VDSS = 650V IXTP8N65X2M Power MOSFET ID25 = 4A RDS(on) 550m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G D S VGSS Continuous 30 V VGSM Transient 40 V

 9.5. Size:229K  ixys
 ixta8n50p ixtp8n50p.pdf

IXTA 8N50P VDSS = 500 V PolarHVTM IXTP 8N50P ID25 = 8 A Power MOSFET RDS(on) 0.8 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C8 A IDM

 9.6. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf

Advance Technical Information LinearL2TM Power VDSS = 75V IXTA80N075L2 MOSFETs w/Extended ID25 = 80A IXTP80N075L2 RDS(on) 24m FBSOA IXTH80N075L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 75 V VDGR TJ = 25

 9.7. Size:305K  cn vbsemi
 ixtp80n12t2.pdf

IXTP80N12T2 www.VBsemi.com N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 85 0.0100 at VGS = 6 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S Top View N-Channel

 9.8. Size:206K  inchange semiconductor
 ixtp80n12t2.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTP80N12T2 FEATURES Drain-Source On-Resistance R

 9.9. Size:259K  inchange semiconductor
 ixtp80n10t.pdf

isc N-Channel MOSFET Transistor IXTP80N10T FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P