IXTP88N085T
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTP88N085T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 230
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 88
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 69
nC
trⓘ -
Время нарастания: 90
ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011
Ohm
Тип корпуса:
TO220
Аналог (замена) для IXTP88N085T
IXTP88N085T
Datasheet (PDF)
..1. Size:217K ixys
ixta88n085t ixtp88n085t.pdf 
Preliminary Technical InformationIXTA88N085T VDSS = 85 VTrenchMVTMIXTP88N085T ID25 = 88 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 TC =
9.1. Size:106K ixys
ixtp8n50pm.pdf 
Preliminary Technical InformationIXTP 8N50PM VDSS = 500 VPolarHVTMID25 = 4 APower MOSFET RDS(on) 0.8 (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsOVERMOLDED TO-220(IXTP...M) OUTLINEVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS
9.2. Size:238K ixys
ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf 
Preliminary Technical InformationX2-Class VDSS = 650VIXTY8N65X2Power MOSFET ID25 = 8AIXTA8N65X2 RDS(on) 500m IXTP8N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG
9.3. Size:184K ixys
ixta80n10t ixtp80n10t.pdf 
TrenchMVTM VDSS = 100VIXTA80N10TPower MOSFET ID25 = 80AIXTP80N10T RDS(on) 14m N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-220AB (IXTP)VGSS Continuous 20 VVGSM Transien
9.4. Size:116K ixys
ixtp8n65x2m.pdf 
Advance Technical InformationX2-Class VDSS = 650VIXTP8N65X2MPower MOSFET ID25 = 4A RDS(on) 550m (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGDSVGSS Continuous 30 VVGSM Transient 40 V
9.5. Size:229K ixys
ixta8n50p ixtp8n50p.pdf 
IXTA 8N50P VDSS = 500 VPolarHVTMIXTP 8N50P ID25 = 8 APower MOSFET RDS(on) 0.8 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25 C8 AIDM
9.6. Size:168K ixys
ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf 
Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25
9.7. Size:305K cn vbsemi
ixtp80n12t2.pdf 
IXTP80N12T2www.VBsemi.comN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0085 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC850.0100 at VGS = 6 VTO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S Top ViewN-Channel
9.8. Size:206K inchange semiconductor
ixtp80n12t2.pdf 
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTP80N12T2FEATURESDrain-Source On-Resistance: R
9.9. Size:259K inchange semiconductor
ixtp80n10t.pdf 
isc N-Channel MOSFET Transistor IXTP80N10TFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
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