IXTQ160N085T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTQ160N085T 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 360 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: TO3P
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IXTQ160N085T datasheet
ixth160n075t ixtq160n075t.pdf
Preliminary Technical Information IXTH160N075T VDSS = 75 V TrenchMVTM IXTQ160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C 75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ID25 TC = 25 C 160 A D (TAB
ixth160n10t ixtq160n10t.pdf
Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO-3P (IXTQ)
ixta16n50p ixtp16n50p ixtq16n50p.pdf
IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) 400 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C16 A
Otros transistores... IXTQ130N10T, IXTQ130N15T, IXTQ140N10P, IXTQ14N60P, IXTQ150N06P, IXTQ150N15P, IXTQ152N085T, IXTQ160N075T, 2N7000, IXTQ160N10T, IXTQ16N50P, IXTQ170N10P, IXTQ180N085T, IXTQ180N10T, IXTQ182N055T, IXTQ18N60P, IXTQ200N06P
History: TF68N75
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