IXTQ182N055T Todos los transistores

 

IXTQ182N055T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTQ182N055T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 360 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 182 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO3P
 

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IXTQ182N055T Datasheet (PDF)

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 ixth182n055t ixtq182n055t.pdf pdf_icon

IXTQ182N055T

Preliminary Technical InformationIXTH182N055T VDSS = 55 VTrenchMVTMIXTQ182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-3P

 8.1. Size:205K  ixys
 ixth180n10t ixtq180n10t.pdf pdf_icon

IXTQ182N055T

Preliminary Technical InformationIXTH180N10T VDSS = 100 VTrenchMVTMIXTQ180N10T ID25 = 180 APower MOSFET RDS(on) 6.4 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C 100 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGSM Transient 30 VTO

 8.2. Size:203K  ixys
 ixth180n085t ixtq180n085t.pdf pdf_icon

IXTQ182N055T

Preliminary Technical InformationIXTH180N085T VDSS = 85 VTrenchMVTMIXTQ180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VTO-

 8.3. Size:171K  ixys
 ixtq18n60p ixtv18n60p.pdf pdf_icon

IXTQ182N055T

IXTQ 18N60P VDSS = 600 VPolarHVTMIXTV 18N60P ID25 = 18 APower MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 30 VGVGSM Tranisent 40 VD (TAB)DSID25 TC = 25

MOSTRAR MÁS

Otros transistores... IXTQ152N085T , IXTQ160N075T , IXTQ160N085T , IXTQ160N10T , IXTQ16N50P , IXTQ170N10P , IXTQ180N085T , IXTQ180N10T , K3569 , IXTQ18N60P , IXTQ200N06P , IXTQ200N075T , IXTQ200N085T , IXTQ200N10T , IXTQ220N055T , IXTQ220N075T , IXTQ22N50P .

History: CS110N03A3 | STL22N65M5

 

 
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