IXTQ182N055T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTQ182N055T 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 360 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 182 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TO3P
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IXTQ182N055T datasheet
ixth182n055t ixtq182n055t.pdf
Preliminary Technical Information IXTH182N055T VDSS = 55 V TrenchMVTM IXTQ182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-3P
ixth180n10t ixtq180n10t.pdf
Preliminary Technical Information IXTH180N10T VDSS = 100 V TrenchMVTM IXTQ180N10T ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 100 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO
ixth180n085t ixtq180n085t.pdf
Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-
Otros transistores... IXTQ152N085T, IXTQ160N075T, IXTQ160N085T, IXTQ160N10T, IXTQ16N50P, IXTQ170N10P, IXTQ180N085T, IXTQ180N10T, IRF9540, IXTQ18N60P, IXTQ200N06P, IXTQ200N075T, IXTQ200N085T, IXTQ200N10T, IXTQ220N055T, IXTQ220N075T, IXTQ22N50P
History: TSM2NB60CP | PDN2318S | IRF9Z34SPBF | IXTQ50N25T | SI6433BDQ | IXTT16N20D2
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