IXTQ22N60P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTQ22N60P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ22N60P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 400 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 500 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO3P

Búsqueda de reemplazo de IXTQ22N60P MOSFET

- Selecciónⓘ de transistores por parámetros

IXTQ22N60P datasheet

..1. Size:314K ixys
ixtq22n60p ixtv22n60p.pdf pdf_icon

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25

7.1. Size:198K ixys
ixth22n50p ixtq22n50p ixtv22n50p.pdf pdf_icon

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) 270 m N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Trans

7.2. Size:209K inchange semiconductor
ixtq22n50p.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTQ22N50P FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

8.1. Size:185K ixys
ixth220n075t ixtq220n075t.pdf pdf_icon

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V G (TAB) D VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V S VGSM Transient 20 V ID25 TC = 25

Otros transistores... IXTQ18N60P, IXTQ200N06P, IXTQ200N075T, IXTQ200N085T, IXTQ200N10T, IXTQ220N055T, IXTQ220N075T, IXTQ22N50P, K3569, IXTQ230N085T, IXTQ23N60Q, IXTQ240N055T, IXTQ24N55Q, IXTQ250N075T, IXTQ26N50P, IXTQ26N60P, IXTQ26P20P

🌐 : EN ES РУ

Liste

Recientemente añadidas las descripciónes de los transistores:

IXTQ22N60P Todos los transistores