IXTQ22N60P Todos los transistores

 

IXTQ22N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ22N60P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 400 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 22 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Carga de compuerta (Qg): 62 nC

Tiempo de elevación (tr): 500 nS

Resistencia drenaje-fuente RDS(on): 0.35 Ohm

Empaquetado / Estuche: TO3P

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IXTQ22N60P Datasheet (PDF)

1.1. ixtq22n60p ixtv22n60p.pdf Size:314K _ixys

IXTQ22N60P
IXTQ22N60P

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET ? ? IXTV 22N60PS RDS (on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 TC = 25 C22 A IDM TC = 25 C,

3.1. ixth22n50p ixtq22n50p ixtv22n50p.pdf Size:198K _ixys

IXTQ22N60P
IXTQ22N60P

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) ? ? ? ? ? 270 m? ? ? ? ? N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25C to 150C 500 V S VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Transient 40 V ID25 TC = 25

 4.1. ixth220n075t ixtq220n075t.pdf Size:185K _ixys

IXTQ22N60P
IXTQ22N60P

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C75 V G (TAB) D VDGR TJ = 25C to 175C; RGS = 1 M? 75 V S VGSM Transient 20 V ID25 TC = 25C 220 A TO-3P (IXTQ) ILR

4.2. ixth220n055t ixtq220n055t.pdf Size:204K _ixys

IXTQ22N60P
IXTQ22N60P

Preliminary Technical Information IXTH220N055T VDSS = 55 V TrenchMVTM IXTQ220N055T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V S VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 220

Otros transistores... IXTQ18N60P , IXTQ200N06P , IXTQ200N075T , IXTQ200N085T , IXTQ200N10T , IXTQ220N055T , IXTQ220N075T , IXTQ22N50P , IRF9540 , IXTQ230N085T , IXTQ23N60Q , IXTQ240N055T , IXTQ24N55Q , IXTQ250N075T , IXTQ26N50P , IXTQ26N60P , IXTQ26P20P .

 

 
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