IXTQ22N60P Datasheet. Specs and Replacement

Type Designator: IXTQ22N60P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO3P

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IXTQ22N60P datasheet

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 ixtq22n60p ixtv22n60p.pdf pdf_icon

IXTQ22N60P

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 ... See More ⇒

 7.1. Size:198K  ixys
 ixth22n50p ixtq22n50p ixtv22n50p.pdf pdf_icon

IXTQ22N60P

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) 270 m N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Trans... See More ⇒

 7.2. Size:209K  inchange semiconductor
 ixtq22n50p.pdf pdf_icon

IXTQ22N60P

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTQ22N50P FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

 8.1. Size:185K  ixys
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IXTQ22N60P

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V G (TAB) D VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V S VGSM Transient 20 V ID25 TC = 25 ... See More ⇒

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Detailed specifications: IXTQ18N60P, IXTQ200N06P, IXTQ200N075T, IXTQ200N085T, IXTQ200N10T, IXTQ220N055T, IXTQ220N075T, IXTQ22N50P, K3569, IXTQ230N085T, IXTQ23N60Q, IXTQ240N055T, IXTQ24N55Q, IXTQ250N075T, IXTQ26N50P, IXTQ26N60P, IXTQ26P20P

Keywords - IXTQ22N60P MOSFET specs

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