IXTQ36N30P Todos los transistores

 

IXTQ36N30P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTQ36N30P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 250 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO3P
 

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IXTQ36N30P Datasheet (PDF)

 ..1. Size:252K  ixys
 ixta36n30p ixtp36n30p ixtq36n30p.pdf pdf_icon

IXTQ36N30P

IXTA 36N30P VDSS = 300 VPolarHTTMIXTP 36N30P ID25 = 36 APower MOSFET IXTQ 36N30P RDS(on) 110 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VSD(TAB)VGS Continuous 30 VVGSM Transient 40 VTO-220

 7.1. Size:361K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf pdf_icon

IXTQ36N30P

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 7.2. Size:402K  ixys
 ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf pdf_icon

IXTQ36N30P

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

 7.3. Size:240K  inchange semiconductor
 ixtq36n50p.pdf pdf_icon

IXTQ36N30P

isc N-Channel MOSFET Transistor IXTQ36N50PFEATURESDrain Current I = 36A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

MOSTRAR MÁS

Otros transistores... IXTQ26P20P , IXTQ280N055T , IXTQ30N50L , IXTQ30N50L2 , IXTQ30N50P , IXTQ30N60L2 , IXTQ30N60P , IXTQ32P20T , IRFP250 , IXTQ36N50P , IXTQ36P15P , IXTQ40N50L2 , IXTQ40N50Q , IXTQ42N25P , IXTQ44N50P , IXTQ44P15T , IXTQ450P2 .

History: STL66DN3LLH5 | PM557BA | IRFPE30PBF | CED12N10L | SI8810 | CEDM7001VL | STD10PF06-1

 

 
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