IXTQ460P2 Todos los transistores

 ..1. Size:156K  ixys
 ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V

 ..2. Size:257K  inchange semiconductor
 ixtq460p2.pdf

isc N-Channel MOSFET Transistor IXTQ460P2 FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

 0.1. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V

 9.1. Size:89K  ixys
 ixtq470p2.pdf

Advance Technical Information PolarP2TM VDSS = 500V IXTQ470P2 ID25 = 42A Power MOSFET RDS(on) 145m trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V G D VGSS Continuous 30 V S Tab VGSM

 9.2. Size:148K  ixys
 ixtq44n50p.pdf

IXTQ 44N50P VDSS = 500 V PolarHVTM ID25 = 44 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V VGSM Transient 40 V G ID25 TC = 25 C44 A D (TAB) IDM TC = 25

 9.3. Size:111K  ixys
 ixtp450p2 ixth450p2 ixtq450p2.pdf

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 RDS(on) 330m IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RG

 9.4. Size:89K  ixys
 ixtq480p2.pdf

Advance Technical Information PolarP2TM VDSS = 500V IXTQ480P2 ID25 = 52A Power MOSFET RDS(on) 120m trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V G D VGSS Continuous 30 V S Tab VGSM

 9.5. Size:252K  ixys
 ixta42n25p ixtp42n25p ixtq42n25p.pdf

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 3