IXTQ460P2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTQ460P2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 480 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de IXTQ460P2 MOSFET
IXTQ460P2 Datasheet (PDF)
ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf

PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
ixtq460p2.pdf

isc N-Channel MOSFET Transistor IXTQ460P2FEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf

PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
ixtq470p2.pdf

Advance Technical InformationPolarP2TM VDSS = 500VIXTQ470P2ID25 = 42APower MOSFET RDS(on) 145m trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-3PSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VGDVGSS Continuous 30 VSTabVGSM
Otros transistores... IXTQ36N50P , IXTQ36P15P , IXTQ40N50L2 , IXTQ40N50Q , IXTQ42N25P , IXTQ44N50P , IXTQ44P15T , IXTQ450P2 , AO3401 , IXTQ470P2 , IXTQ480P2 , IXTQ48N20T , IXTQ50N20P , IXTQ50N25T , IXTQ50N28T , IXTQ52N30P , IXTQ52P10P .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: APG60N10S | APG120N04NF | AP8G06S | AP6P04S | AP6G03S | AP65N06DF | AP65N06D | AP4957A | AP15H06S | AP10G04S | AP90N08NF | AP8P06S | AP4G02LI | AP4606B | AP3P06MI | AP2302AI
Popular searches
p0903bdg | c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312