IXTQ460P2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTQ460P2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO3P
IXTQ460P2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTQ460P2 Datasheet (PDF)
ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
ixtq460p2.pdf
isc N-Channel MOSFET Transistor IXTQ460P2FEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf
PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V
ixtq470p2.pdf
Advance Technical InformationPolarP2TM VDSS = 500VIXTQ470P2ID25 = 42APower MOSFET RDS(on) 145m trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-3PSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VGDVGSS Continuous 30 VSTabVGSM
ixtq44n50p.pdf
IXTQ 44N50P VDSS = 500 VPolarHVTMID25 = 44 APower MOSFET RDS(on) 140 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transient 40 VGID25 TC = 25 C44 AD(TAB)IDM TC = 25
ixtp450p2 ixth450p2 ixtq450p2.pdf
Advance Technical InformationPolarP2TM VDSS = 500VIXTP450P2ID25 = 16APower MOSFETIXTQ450P2 RDS(on) 330m IXTH450P2trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedTO-220AB (IXTP)Fast Intrinsic DiodeGDTabSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RG
ixtq480p2.pdf
Advance Technical InformationPolarP2TM VDSS = 500VIXTQ480P2ID25 = 52APower MOSFET RDS(on) 120m trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-3PSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VGDVGSS Continuous 30 VSTabVGSM
ixta42n25p ixtp42n25p ixtq42n25p.pdf
IXTA 42N25P VDSS = 250 VPolarHTTMIXTP 42N25P ID25 = 42 APower MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 250 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB)VGS Continuous 20 VTO-220 (IXTP)VGSM Transient 3
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTH10P60 | IXTA88N085T | IRCZ245
History: IXTH10P60 | IXTA88N085T | IRCZ245
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