IXTQ60N20T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ60N20T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 118 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO3P

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IXTQ60N20T datasheet

 ..1. Size:135K  ixys
 ixta60n20t ixtp60n20t ixtq60n20t.pdf pdf_icon

IXTQ60N20T

TrenchTM VDSS = 200V IXTA60N20T Power MOSFET ID25 = 60A IXTP60N20T RDS(on) 40m IXTQ60N20T TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers G Avalanche Rated S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C, RGS = 1M 200 V G VGSS Continuous 20 V D D (

 5.1. Size:149K  ixys
 ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf pdf_icon

IXTQ60N20T

Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 RDS(on) 45m FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS

 9.1. Size:252K  ixys
 ixta62n15p ixtp62n15p ixtq62n15p.pdf pdf_icon

IXTQ60N20T

IXTA 62N15P VDSS = 150 V PolarHTTM IXTP 62N15P ID25 = 62 A Power MOSFET IXTQ 62N15P RDS(on) 40 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V G S VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-220 (I

 9.2. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTQ60N20T

IXTQ69N30P VDSS = 300 V PolarHTTM IXTT69N30P ID25 = 69 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C69 A (TAB)

MOSTRAR MÁS

Otros transistores... IXTQ48N20T, IXTQ50N20P, IXTQ50N25T, IXTQ50N28T, IXTQ52N30P, IXTQ52P10P, IXTQ60N10T, IXTQ60N20L2, IRFZ24N, IXTQ62N15P, IXTQ64N25P, IXTQ69N30P, IXTQ69N30PM, IXTQ74N20P, IXTQ75N10P, IXTQ76N25T, IXTQ82N25P