IXTT60N10 Todos los transistores

 

IXTT60N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTT60N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 150 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO268
 

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IXTT60N10 Datasheet (PDF)

 7.1. Size:149K  ixys
 ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf pdf_icon

IXTT60N10

Advance Technical InformationLinear L2TM Power VDSS = 200VIXTT60N20L2MOSFET w/ Extended ID25 = 60AIXTQ60N20L2 RDS(on) 45m FBSOAIXTH60N20L2TO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS

 9.1. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTT60N10

IXTQ69N30P VDSS = 300 VPolarHTTMIXTT69N30P ID25 = 69 APower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C69 A(TAB)

 9.2. Size:128K  ixys
 ixtt6n150.pdf pdf_icon

IXTT60N10

High Voltage VDSS = 1500VIXTT6N150ID25 = 6APower MOSFETsIXTH6N150 RDS(on) 3.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient

 9.3. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTT60N10

VDSS = 250 VIXTQ 64N25PPolarHTTMID25 = 64 AIXTT 64N25PPower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C64 A(TAB

MOSTRAR MÁS

Otros transistores... IXTT40N50L2 , IXTT440N055T2 , IXTT48P20P , IXTT500N04T2 , IXTT50N30 , IXTT50P085 , IXTT50P10 , IXTT52N30P , IRF9540N , IXTT60N20L2 , IXTT64N25P , IXTT68P20T , IXTT69N30P , IXTT6N120 , IXTT72N10 , IXTT72N20 , IXTT74N20P .

History: SSF2316E | TPCP8106 | FIR20N60FG | VS3640DE

 

 
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