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IXTT60N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IXTT60N10

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 60 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 110 nC

Время нарастания (tr): 150 ns

Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm

Тип корпуса: TO268

Аналог (замена) для IXTT60N10

 

 

IXTT60N10 Datasheet (PDF)

3.1. ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf Size:149K _ixys

IXTT60N10
IXTT60N10

Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 ≤ Ω RDS(on) ≤ Ω ≤ 45mΩ ≤ Ω ≤ Ω FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V TO-3P (IXTQ) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V VGSS

5.1. ixtq64n25p ixtt64n25p.pdf Size:171K _ixys

IXTT60N10
IXTT60N10

VDSS = 250 V IXTQ 64N25P PolarHTTM ID25 = 64 A IXTT 64N25P Power MOSFET ≤ Ω RDS(on) ≤ 49 mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 250 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 250 V VGSS Continuous ±20 V VGSM Transient ±30 V G D ID25 TC = 25° C64 A (TAB

5.2. ixtt6n150.pdf Size:128K _ixys

IXTT60N10
IXTT60N10

High Voltage VDSS = 1500V IXTT6N150 ID25 = 6A Power MOSFETs IXTH6N150 ≤ Ω RDS(on) ≤ 3.5Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 1500 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V VGSS Continuous ±20 V TO-247 (IXTH) VGSM Transient

 5.3. ixtq69n30p ixtt69n30p.pdf Size:169K _ixys

IXTT60N10
IXTT60N10

IXTQ69N30P VDSS = 300 V PolarHTTM IXTT69N30P ID25 = 69 A Power MOSFET ≤ Ω RDS(on) ≤ 49 mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 300 V VGSS Continuous ±20 V VGSM Transient ±30 V G D ID25 TC = 25° C69 A (TAB)

5.4. ixth6n120 ixtt6n120.pdf Size:588K _ixys

IXTT60N10
IXTT60N10

IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET Ω RDS(on) = 2.6 Ω Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V (TAB) VGSM Transient ±30 V ID25 TC = 25°C6 A

Другие MOSFET... IXTT40N50L2 , IXTT440N055T2 , IXTT48P20P , IXTT500N04T2 , IXTT50N30 , IXTT50P085 , IXTT50P10 , IXTT52N30P , J111 , IXTT60N20L2 , IXTT64N25P , IXTT68P20T , IXTT69N30P , IXTT6N120 , IXTT72N10 , IXTT72N20 , IXTT74N20P .

 

 
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