IXTT64N25P Todos los transistores

 

IXTT64N25P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTT64N25P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.049 Ohm
   Paquete / Cubierta: TO268
     - Selección de transistores por parámetros

 

IXTT64N25P Datasheet (PDF)

 ..1. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTT64N25P

VDSS = 250 VIXTQ 64N25PPolarHTTMID25 = 64 AIXTT 64N25PPower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C64 A(TAB

 9.1. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTT64N25P

IXTQ69N30P VDSS = 300 VPolarHTTMIXTT69N30P ID25 = 69 APower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C69 A(TAB)

 9.2. Size:128K  ixys
 ixtt6n150.pdf pdf_icon

IXTT64N25P

High Voltage VDSS = 1500VIXTT6N150ID25 = 6APower MOSFETsIXTH6N150 RDS(on) 3.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient

 9.3. Size:149K  ixys
 ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf pdf_icon

IXTT64N25P

Advance Technical InformationLinear L2TM Power VDSS = 200VIXTT60N20L2MOSFET w/ Extended ID25 = 60AIXTQ60N20L2 RDS(on) 45m FBSOAIXTH60N20L2TO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPP65R045C7 | DMN2170U | FHP100N03C | FQB10N60CTM | AOB66919L | RW1E025RP | CED95P04

 

 
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