IXTT64N25P PDF and Equivalents Search

 

IXTT64N25P Specs and Replacement


   Type Designator: IXTT64N25P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: TO268
 

 IXTT64N25P substitution

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IXTT64N25P datasheet

 ..1. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTT64N25P

VDSS = 250 V IXTQ 64N25P PolarHTTM ID25 = 64 A IXTT 64N25P Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C64 A (TAB... See More ⇒

 9.1. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTT64N25P

IXTQ69N30P VDSS = 300 V PolarHTTM IXTT69N30P ID25 = 69 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C69 A (TAB) ... See More ⇒

 9.2. Size:128K  ixys
 ixtt6n150.pdf pdf_icon

IXTT64N25P

High Voltage VDSS = 1500V IXTT6N150 ID25 = 6A Power MOSFETs IXTH6N150 RDS(on) 3.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient ... See More ⇒

 9.3. Size:149K  ixys
 ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf pdf_icon

IXTT64N25P

Advance Technical Information Linear L2TM Power VDSS = 200V IXTT60N20L2 MOSFET w/ Extended ID25 = 60A IXTQ60N20L2 RDS(on) 45m FBSOA IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS... See More ⇒

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Detailed specifications: IXTT48P20P , IXTT500N04T2 , IXTT50N30 , IXTT50P085 , IXTT50P10 , IXTT52N30P , IXTT60N10 , IXTT60N20L2 , 13N50 , IXTT68P20T , IXTT69N30P , IXTT6N120 , IXTT72N10 , IXTT72N20 , IXTT74N20P , IXTT75N10 , IXTT75N10L2 .

History: KQB27P06 | 8N60KL-TF1-T

Keywords - IXTT64N25P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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