IXTT6N120 Todos los transistores

 

IXTT6N120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTT6N120
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 850 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO268
 

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IXTT6N120 Datasheet (PDF)

 ..1. Size:588K  ixys
 ixth6n120 ixtt6n120.pdf pdf_icon

IXTT6N120

IXTH 6N120 VDSS = 1200 VHigh VoltageIXTT 6N120 ID25 = 6 APower MOSFET RDS(on) = 2.6 N-Channel Enhancement ModeAvalanche RatedPreliminary Data SheetTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C6 A

 7.1. Size:128K  ixys
 ixtt6n150.pdf pdf_icon

IXTT6N120

High Voltage VDSS = 1500VIXTT6N150ID25 = 6APower MOSFETsIXTH6N150 RDS(on) 3.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient

 9.1. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTT6N120

IXTQ69N30P VDSS = 300 VPolarHTTMIXTT69N30P ID25 = 69 APower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C69 A(TAB)

 9.2. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTT6N120

VDSS = 250 VIXTQ 64N25PPolarHTTMID25 = 64 AIXTT 64N25PPower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C64 A(TAB

MOSTRAR MÁS

Otros transistores... IXTT50P085 , IXTT50P10 , IXTT52N30P , IXTT60N10 , IXTT60N20L2 , IXTT64N25P , IXTT68P20T , IXTT69N30P , 4435 , IXTT72N10 , IXTT72N20 , IXTT74N20P , IXTT75N10 , IXTT75N10L2 , IXTT75N15 , IXTT80N20L , IXTT82N25P .

History: IPD60R380C6 | IPD60R1K5CE | CHM4435AZGP | AOW2502 | TK11A50D | NTMFS4C054N | AON2409

 

 
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