IXTT6N120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTT6N120  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 850 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO268

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IXTT6N120 datasheet

 ..1. Size:588K  ixys
 ixth6n120 ixtt6n120.pdf pdf_icon

IXTT6N120

IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET RDS(on) = 2.6 N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A

 7.1. Size:128K  ixys
 ixtt6n150.pdf pdf_icon

IXTT6N120

High Voltage VDSS = 1500V IXTT6N150 ID25 = 6A Power MOSFETs IXTH6N150 RDS(on) 3.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient

 9.1. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTT6N120

IXTQ69N30P VDSS = 300 V PolarHTTM IXTT69N30P ID25 = 69 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C69 A (TAB)

 9.2. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTT6N120

VDSS = 250 V IXTQ 64N25P PolarHTTM ID25 = 64 A IXTT 64N25P Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C64 A (TAB

MOSTRAR MÁS

Otros transistores... IXTT50P085, IXTT50P10, IXTT52N30P, IXTT60N10, IXTT60N20L2, IXTT64N25P, IXTT68P20T, IXTT69N30P, 5N65, IXTT72N10, IXTT72N20, IXTT74N20P, IXTT75N10, IXTT75N10L2, IXTT75N15, IXTT80N20L, IXTT82N25P