IXTT74N20P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTT74N20P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 74 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 160 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm

Encapsulados: TO268

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IXTT74N20P datasheet

 ..1. Size:170K  ixys
 ixtq74n20p ixtt74n20p.pdf pdf_icon

IXTT74N20P

IXTQ 74N20P VDSS = 200 V PolarHTTM IXTT 74N20P ID25 = 74 A Power MOSFET RDS(on) 34 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 C74 A (TAB

 9.1. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTT74N20P

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30

 9.2. Size:112K  ixys
 ixtt72n10 ixth72n10.pdf pdf_icon

IXTT74N20P

Advance Technical Information IXTH 72N20 VDSS = 200 V High Current IXTT 72N20 ID25 = 72 A Power MOSFET RDS(on) = 33 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C72 A IDM TC =

 9.3. Size:583K  ixys
 ixth75n15 ixtt75n15.pdf pdf_icon

IXTT74N20P

IXTH 75N15 VDSS = 150 V High Current IXTT 75N15 ID25 = 75 A Power MOSFET RDS(on) = 23 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C75 A IDM TC = 25 C, pulse width limited by T

MOSTRAR MÁS

Otros transistores... IXTT60N10, IXTT60N20L2, IXTT64N25P, IXTT68P20T, IXTT69N30P, IXTT6N120, IXTT72N10, IXTT72N20, AON6380, IXTT75N10, IXTT75N10L2, IXTT75N15, IXTT80N20L, IXTT82N25P, IXTT88N15, IXTT88N30P, IXTT8P50